ksc5026m ? npn silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com ksc5026m rev. b3 1 january 2011 ksc5026m npn silicon transistor features ? high voltage and high reliability ? high speed switching ?wide soa absolute maximum ratings t a = 25c unless otherwise noted package marking and ordering information * the suffix "m" & "s" of fsid denotes to126 package and the suffix "o" of fsid denotes h fe -class symbol parameter value units v cbo collector-base voltage 1100 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7 v i c collector current (dc) 1.5 a i cp collector current (pulse) 5 a i b base current 0.8 a p c collector dissipation (t c =25 c) 20 w t j junction temperature 150 c t stg storage temperature - 55 to 150 c part number marking package packing method remarks ksc5026mos* c5026m-o to-126 bulk 1 to-126 1. emitter 2.collector 3.base
ksc5026m ? npn silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com ksc5026m rev. b3 2 electrical characteristics t a = 25c unless otherwise noted h fe classification symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c = 1ma, i e = 0 1100 v bv ceo collector-emitter breakdown voltage i c = 5ma, i b = 0 800 v bv ebo emitter-base breakdown voltage i e = 1ma, i c = 0 7 v v cex (sus) collector-emitter sustaining voltage i c = 0.75a, i b1 = -i b2 = 0.15a, l = 5mh, clamped 800 v i cbo collector cut-off current v cb = 800v, i e = 0 10 a i ebo emitter cut-off current v eb = 5v, i c = 0 10 a h fe1 h fe2 dc current gain v ce = 5v, i c = 0.1a v ce = 5v, i c = 0.5a 10 8 40 v ce (sat) collector-emitter saturation voltage i c = 0.75a, i b = 0.15a 2 v v be (sat) base-emitter saturation voltage i c = 0.75a, i b = 0.15a 1.5 v c ob output capacitance v cb = 10v, i e = 0, f = 1mhz 35 pf f t current gain bandwidth product v ce = 10v, i c = 0.1a 15 mhz t on turn on time v cc = 400v i c = 5i b1 = -2.5i b2 = 1a r l = 400 0.5 s t stg storage time 3 s t f fall time 0.3 s classification n r o h fe1 10 ~ 20 15 ~ 30 20 ~ 40
ksc5026m ? npn silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com ksc5026m rev. b3 3 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emi tter saturation voltage figure 4. base-emitter on voltage figure 5. switching time figure 6. safe operating area 012345678910 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i b = 120ma i b = 80ma i b = 100ma i b = 60ma i b = 40ma i b = 20ma i b = 10ma i b = 5ma i b = 0 i c [a], collector current v ce [v], collector-emitter voltage 0.01 0.1 1 10 100 1 10 100 1000 v ce = 5v h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 0.01 0.1 1 10 i c = 5 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ce = 5v i c [a], collector current v be [v], base-emitter voltage 0.1 1 10 0.01 0.1 1 10 t f t on t stg t on , t stg , t f [ s], time i c [a], collector current 1 10 100 1000 1e-3 0.01 0.1 1 10 100 s 1 m s 1 0 m s d c i c (max).(pulse) i c (max) i c [a], collector current v ce [v], collector-emitter voltage
ksc5026m ? npn silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com ksc5026m rev. b3 4 typical performance characteristics (continued) figure 7. reverse bias safe operating area figure 8. power derating 10 100 1000 10000 0.01 0.1 1 10 100 i b 2 = -0.15a i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 10 20 30 p c [w], power dissipation t c [ o c], case temperature
ksc5026m ? npn silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com ksc5026m rev. b3 5 physical dimension 3.25 0.20 8.00 0.30 3.20 0.10 0.75 0.10 #1 0.75 0.10 2.28typ [2.28 0.20] 2.28typ [2.28 0.20] 1.60 0.10 11.00 0.20 3.90 0.1 0 14.20max 16.10 0.20 13.06 0.30 1.75 0.2 0 (0.50) (1.00) 0.50 +0.10 ?.05 to-126 dimensions in millimeters
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